SEMI OpenIR  > 中科院半导体材料科学重点实验室
Blue-shift photoluminescence from porous InAlAs
Jiang YC (Jiang Y. C.); Liu FQ (Liu F. Q.); Wang LJ (Wang L. J.); Yin W (Yin W.); Wang ZG (Wang Z. G.); Jiang, YC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: fqliu@semi.ac.cn
2010
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume25Issue:11Pages:Art. No. 115006
AbstractA porous InAlAs structure was first obtained by electrochemical etching. Nano-pore arrays were formed when the In0.52Al0.48As membrane was anodized at constant voltages in an HF aqueous solution. These self-assembled structures showed evident blue-shift photoluminescence emissions. While a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. The results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data.
metadata_24其它
KeywordMacroporous Silicon Pore Formation Gap Inp Al0.48in0.52as Nanostructures Morphology
Subject Area半导体材料
Funding OrganizationThis work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, respectively). The authors would like to thank X L Zhou for useful discussion and an anonymous reviewer of Journal of Applied Physics for helpful suggestions.
Indexed BySCI
Language英语
Date Available2010-12-28
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20680
Collection中科院半导体材料科学重点实验室
Corresponding AuthorJiang, YC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: fqliu@semi.ac.cn
Recommended Citation
GB/T 7714
Jiang YC ,Liu FQ ,Wang LJ ,et al. Blue-shift photoluminescence from porous InAlAs[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2010,25(11):Art. No. 115006.
APA Jiang YC ,Liu FQ ,Wang LJ ,Yin W ,Wang ZG ,&Jiang, YC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: fqliu@semi.ac.cn.(2010).Blue-shift photoluminescence from porous InAlAs.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,25(11),Art. No. 115006.
MLA Jiang YC ,et al."Blue-shift photoluminescence from porous InAlAs".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 25.11(2010):Art. No. 115006.
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