Blue-shift photoluminescence from porous InAlAs | |
Jiang YC (Jiang Y. C.); Liu FQ (Liu F. Q.); Wang LJ (Wang L. J.); Yin W (Yin W.); Wang ZG (Wang Z. G.); Jiang, YC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: fqliu@semi.ac.cn | |
2010 | |
Source Publication | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
![]() |
Volume | 25Issue:11Pages:Art. No. 115006 |
Abstract | A porous InAlAs structure was first obtained by electrochemical etching. Nano-pore arrays were formed when the In0.52Al0.48As membrane was anodized at constant voltages in an HF aqueous solution. These self-assembled structures showed evident blue-shift photoluminescence emissions. While a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. The results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data. |
metadata_24 | 其它 |
Keyword | Macroporous Silicon Pore Formation Gap Inp Al0.48in0.52as Nanostructures Morphology |
Subject Area | 半导体材料 |
Funding Organization | This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, respectively). The authors would like to thank X L Zhou for useful discussion and an anonymous reviewer of Journal of Applied Physics for helpful suggestions. |
Indexed By | SCI |
Language | 英语 |
Date Available | 2010-12-28 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20680 |
Collection | 中科院半导体材料科学重点实验室 |
Corresponding Author | Jiang, YC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: fqliu@semi.ac.cn |
Recommended Citation GB/T 7714 | Jiang YC ,Liu FQ ,Wang LJ ,et al. Blue-shift photoluminescence from porous InAlAs[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2010,25(11):Art. No. 115006. |
APA | Jiang YC ,Liu FQ ,Wang LJ ,Yin W ,Wang ZG ,&Jiang, YC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: fqliu@semi.ac.cn.(2010).Blue-shift photoluminescence from porous InAlAs.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,25(11),Art. No. 115006. |
MLA | Jiang YC ,et al."Blue-shift photoluminescence from porous InAlAs".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 25.11(2010):Art. No. 115006. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Blue-shift photolumi(683KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment