| Blue-shift photoluminescence from porous InAlAs | |
| Jiang YC (Jiang Y. C.); Liu FQ (Liu F. Q.); Wang LJ (Wang L. J.); Yin W (Yin W.); Wang ZG (Wang Z. G.); Jiang, YC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: fqliu@semi.ac.cn | |
| 2010 | |
| Source Publication | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| Volume | 25Issue:11Pages:Art. No. 115006 |
| Abstract | A porous InAlAs structure was first obtained by electrochemical etching. Nano-pore arrays were formed when the In0.52Al0.48As membrane was anodized at constant voltages in an HF aqueous solution. These self-assembled structures showed evident blue-shift photoluminescence emissions. While a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. The results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data. |
| metadata_24 | 其它 |
| Keyword | Macroporous Silicon Pore Formation Gap Inp Al0.48in0.52as Nanostructures Morphology |
| Subject Area | 半导体材料 |
| Funding Organization | This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, respectively). The authors would like to thank X L Zhou for useful discussion and an anonymous reviewer of Journal of Applied Physics for helpful suggestions. |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2010-12-28 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20680 |
| Collection | 中科院半导体材料科学重点实验室 |
| Corresponding Author | Jiang, YC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: fqliu@semi.ac.cn |
| Recommended Citation GB/T 7714 | Jiang YC ,Liu FQ ,Wang LJ ,et al. Blue-shift photoluminescence from porous InAlAs[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2010,25(11):Art. No. 115006. |
| APA | Jiang YC ,Liu FQ ,Wang LJ ,Yin W ,Wang ZG ,&Jiang, YC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: fqliu@semi.ac.cn.(2010).Blue-shift photoluminescence from porous InAlAs.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,25(11),Art. No. 115006. |
| MLA | Jiang YC ,et al."Blue-shift photoluminescence from porous InAlAs".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 25.11(2010):Art. No. 115006. |
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| Blue-shift photolumi（683KB） | 限制开放 | License | Application Full Text | |||
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