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| Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs | |
| Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai); Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn | |
| 2010 | |
| Source Publication | PHYSICAL REVIEW B
 |
| Volume | 82Issue:19Pages:Art. No. 193204 |
| Abstract | For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture. |
| metadata_24 | 国际 |
| Keyword | Impurities Gaas1-xnx Nitrogen Gainnas States Traps |
| Subject Area | 半导体物理 |
| Funding Organization | This work was supported by the "973" program of the National Basic Research Program of China under Grant No. G2009CB929300 and the National Natural Science Foundation of China under Grants No. 60821061 and No. 60776061. J.L. acknowledges financial support by the "One-hundred-Talent-Plan" program of the Chinese Academy of Sciences. The work at NREL was supported by the U.S. Department of Energy, under Contract No. DE-AC36-08GO28308. |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2010-12-27 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20678 |
| Collection | 半导体超晶格国家重点实验室 |
| Corresponding Author | Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn |
| Recommended Citation GB/T 7714 | Deng HX ,Li JB ,Li SS ,et al. Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs[J]. PHYSICAL REVIEW B,2010,82(19):Art. No. 193204. |
| APA | Deng HX .,Li JB .,Li SS .,Peng HW .,Xia JB .,...&Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn.(2010).Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs.PHYSICAL REVIEW B,82(19),Art. No. 193204. |
| MLA | Deng HX ,et al."Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs".PHYSICAL REVIEW B 82.19(2010):Art. No. 193204. |
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