SEMI OpenIR  > 中科院半导体材料科学重点实验室
Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region
Lv XQ (Lv X. Q.); Jin P (Jin P.); Wang ZG (Wang Z. G.); Lv, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. pengjin@red.semi.ac.cn
2010
Source PublicationIEEE PHOTONICS TECHNOLOGY LETTERS
Volume22Issue:24Pages:1799-1801
AbstractA broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.
metadata_24其它
KeywordBroadband Tuning External Cavity Quantum Dots (Qds) Tunable Laser
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-12-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20677
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLv, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. pengjin@red.semi.ac.cn
Recommended Citation
GB/T 7714
Lv XQ ,Jin P ,Wang ZG ,et al. Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2010,22(24):1799-1801.
APA Lv XQ ,Jin P ,Wang ZG ,&Lv, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. pengjin@red.semi.ac.cn.(2010).Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region.IEEE PHOTONICS TECHNOLOGY LETTERS,22(24),1799-1801.
MLA Lv XQ ,et al."Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region".IEEE PHOTONICS TECHNOLOGY LETTERS 22.24(2010):1799-1801.
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