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Abnormal photoabsorption in high resistance GaN epilayer
Liu WB (Liu Wen-Bao); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Liu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wbliu@semi.ac.cn
2010
Source PublicationACTA PHYSICA SINICA
Volume59Issue:11Pages:8048-8051
AbstractUnintentionally doped GaN epilayers are grown by the metalorganic chemical vapor deposition (MOCVD). Photovoltaic (PV) spectroscopy shows that there appears an abnormal photoabsorption in some undoped GaN films with high resistance. The peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of GaN. This phenomenon may be related to exciton absorption. Then metal-semiconductor-metal (MSM) Schottky photodetectors are fabricated on these high resistance epilayers. The photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. When the excitation light irradiates around the reverse biased Schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. Furthermore, when the excitation light irradiates the reverse biased Schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased Schottky junction. The shift value is about 28 meV, and it is found to be insensitive to temperature. According to the analyses of the distribution of the electric field within the MSM device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed.
metadata_24其它
KeywordGan Exciton Photovoltaic Spectroscopy Msm Photoresponsivity
Subject Area光电子学
Funding OrganizationProject supported by the National Natural Science Foundation of China (Grant Nos. 60776047, 60506001, 60476021, 60576003, 60836003).
Indexed BySCI
Language中文
Date Available2010-12-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20674
Collection集成光电子学国家重点实验室
Corresponding AuthorLiu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wbliu@semi.ac.cn
Recommended Citation
GB/T 7714
Liu WB ,Zhao DG ,Jiang DS ,et al. Abnormal photoabsorption in high resistance GaN epilayer[J]. ACTA PHYSICA SINICA,2010,59(11):8048-8051.
APA Liu WB .,Zhao DG .,Jiang DS .,Liu ZS .,Zhu JJ .,...&Liu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wbliu@semi.ac.cn.(2010).Abnormal photoabsorption in high resistance GaN epilayer.ACTA PHYSICA SINICA,59(11),8048-8051.
MLA Liu WB ,et al."Abnormal photoabsorption in high resistance GaN epilayer".ACTA PHYSICA SINICA 59.11(2010):8048-8051.
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