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Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.); Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
2010
Source PublicationPHYSICA B-CONDENSED MATTER
Volume405Issue:22Pages:4668-4672
AbstractThe evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and induces an apparent red-shift of the cathodoluminescence peak of the InGaN layer. On the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of InGaN layers. A transition layer region with both strain and In composition gradients is found to exist in the 450-nm-thick InGaN layer.
metadata_24国内
KeywordIngan Dislocation Metalorganic Chemical Vapor Deposition High Resolution X-ray Diffraction Cathodoluminescence Misfit Dislocations Quantum-wells Band-gap Epilayers Generation Alloys Inn
Subject Area光电子学
Funding OrganizationThis work was supported by the National Natural Science Fund of China (Grant nos. 60976045, 60506001, 60836003 and 60776047), National Basic Research Program (2007CB936700) and the National Science Foundation for Distinguished Young Scholars under Grant no. 60925017. The authors would like to thank the Beijing Synchrotron Radiation Facility (BSRF) for assistance in thin film characterization.
Indexed BySCI
Language英语
Date Available2010-12-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20672
Collection集成光电子学国家重点实验室
Corresponding AuthorWang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
Recommended Citation
GB/T 7714
Wang H ,Jiang DS ,Jahn U ,et al. Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties[J]. PHYSICA B-CONDENSED MATTER,2010,405(22):4668-4672.
APA Wang H .,Jiang DS .,Jahn U .,Zhu JJ .,Zhao DG .,...&Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn.(2010).Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties.PHYSICA B-CONDENSED MATTER,405(22),4668-4672.
MLA Wang H ,et al."Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties".PHYSICA B-CONDENSED MATTER 405.22(2010):4668-4672.
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