SEMI OpenIR  > 中科院半导体材料科学重点实验室
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.); Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouxl06@semi.ac.cn
2010
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume43Issue:48Pages:Art. No. 485102
AbstractIn this report, we have investigated the temperature and injection power dependent photoluminescence in self-assembled InAs/GaAs quantum dots (QDs) systems with low and high areal density, respectively. It was found that, for the high-density samples, state filling effect and abnormal temperature dependence were interacting. In particular, the injection power-induced variations were most obvious at the temperature interval where carriers transfer from small quantum dots (SQDs) to large quantum dots (LQDs). Such interplay effects could be explained by carrier population of SQDs relative to LQDs, which could be fitted well using a thermal carrier rate equation model. On the other hand, for the low density sample, an abnormal broadening of full width at half maximum (FWHM) was observed at the 15-100 K interval. In addition, the FWHM also broadened with increasing injection power at the whole measured temperature interval. Such peculiarities of low density QDs could be attributed to the exciton dephasing processes, which is similar to the characteristic of a single quantum dot. The compared interplay effects of high-and low-density QDs reflect the difference between an interacting and isolated QDs system.
metadata_24其它
KeywordDependence Spectra
Subject Area半导体材料
Funding OrganizationThis work was supported by the 973 program (2006CB604908, 2006CB921607) and the National Natural Science Foundation of China (60625402, 60990313).
Indexed BySCI
Language英语
Date Available2010-12-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20671
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouxl06@semi.ac.cn
Recommended Citation
GB/T 7714
Zhou XL ,Chen YH ,Jia CH ,et al. Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2010,43(48):Art. No. 485102.
APA Zhou XL .,Chen YH .,Jia CH .,Ye XL .,Xu B .,...&Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouxl06@semi.ac.cn.(2010).Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density.JOURNAL OF PHYSICS D-APPLIED PHYSICS,43(48),Art. No. 485102.
MLA Zhou XL ,et al."Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density".JOURNAL OF PHYSICS D-APPLIED PHYSICS 43.48(2010):Art. No. 485102.
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