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Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters
Song YF (Song Yafeng); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Xu XQ (Xu Xiaoqing); Wang J (Wang Jun); Guo Y (Guo Yan); Shi K (Shi Kai); Li ZW (Li Zhiwei); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Song, YF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songyafeng@semi.ac.cn
2010
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume108Issue:8Pages:Art. No. 083112
AbstractIntersubband absorption energy shifts in 3-level system stemming from depolarization and excitonlike effects are investigated. Analytically, the expressions we derive present good explanations to the conventional 2-level results and bare potential transition energy results; and numerical results show that they are more exact than the previous studies to describe the 3-level system depolarization and excitonlike shift (DES) character especially for higher carrier density (more than 8 x 10(11) cm(-2)). One interesting detail we find is that the "large blue" DES becomes "slight redshift" in the low doping limit (less than 1.9 x 10(11) cm(-2)), which may be neglected by the previous studies of intersubband transitions. Temperature character of DES in the step well structure is also numerically studied. Finally the above are applied to calculate asymmetric step quantum well structures. The two main functional aspects of terahertz (THz) emitters are discussed and several basic optimizing conditions are considered. By adjusting the well geometry parameters and material composition systematically, some optimized structures which satisfy all of the six conditions are recommended in tables. These optimizations may provide useful references to the design of 3-level-based optically pumping THz emitters.
metadata_24国内
KeywordOptical Phonon Energy Inversion-layers Transitions Relaxation Lasers States
Subject Area半导体材料
Funding OrganizationThis work was supported by the Special Funds for Major State Basic Research Project 973 program of China (Grant No. 2006CB604907), the National Science Foundation of China (Grant Nos. 60776015 and 60976008), and the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z.
Indexed BySCI
Language英语
Date Available2010-12-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20661
Collection中科院半导体材料科学重点实验室
Corresponding AuthorSong, YF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songyafeng@semi.ac.cn
Recommended Citation
GB/T 7714
Song YF ,Lu YW ,Zhang BA ,et al. Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters[J]. JOURNAL OF APPLIED PHYSICS,2010,108(8):Art. No. 083112.
APA Song YF .,Lu YW .,Zhang BA .,Xu XQ .,Wang J .,...&Song, YF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songyafeng@semi.ac.cn.(2010).Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters.JOURNAL OF APPLIED PHYSICS,108(8),Art. No. 083112.
MLA Song YF ,et al."Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters".JOURNAL OF APPLIED PHYSICS 108.8(2010):Art. No. 083112.
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