SEMI OpenIR  > 中科院半导体材料科学重点实验室
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.); Zhou, GY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
2010
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume108Issue:8Pages:Art. No. 083513
AbstractIn this work, we have adopted reflectance difference spectroscopy to study the evolution of InAs layer grown at different temperatures in GaAs matrix. Associated with the two- to three-dimensional growth transition of InAs layer, the transition energies and the in-plane optical anisotropy of InAs wetting layer exhibit abrupt changes. This provides a new way to decide the critical thickness h(c) for the growth transition. The obtained h(c)s are compared with those determined by atomic force microscope measurement, and discrepancy is found at high temperatures. The origin of the difference is clarified and the variations in hc with temperature are further discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494043]
metadata_24其它
KeywordQuantum-dot System Island Formation In-situ Evolution Gaas Photoluminescence
Subject Area半导体材料
Funding OrganizationThe work was supported by the National Natural Science Foundation of China (Grant Nos. 60625402 and 60990313) and the 973 program (Grant Nos. 2006CB604908 and 2006CB921607).
Indexed BySCI
Language英语
Date Available2010-12-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20659
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhou, GY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhou GY ,Chen YH ,Tang CG ,et al. The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy[J]. JOURNAL OF APPLIED PHYSICS,2010,108(8):Art. No. 083513.
APA Zhou GY .,Chen YH .,Tang CG .,Liang LY .,Jin P .,...&Zhou, GY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn.(2010).The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy.JOURNAL OF APPLIED PHYSICS,108(8),Art. No. 083513.
MLA Zhou GY ,et al."The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy".JOURNAL OF APPLIED PHYSICS 108.8(2010):Art. No. 083513.
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