SEMI OpenIR  > 中科院半导体材料科学重点实验室
High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers
Wang Y (Wang Yang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei); Wang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangyang06@semi.ac.cn
2010
Source PublicationCHINESE PHYSICS LETTERS
Volume27Issue:11Pages:Art. No. 114201
AbstractWe fabricate 1.5 mu m InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature.. 0 of 160K at 20 degrees C is obtained for 500-mu m-long lasers. T-0 is measured as high as 88K in the temperature range of 15-75 degrees C. Cavity length dependence of T-0 is investigated.
metadata_24其它
KeywordAuger Recombination Threshold Current Dependence Device
Subject Area半导体器件
Funding OrganizationSupported by the National Natural Science Foundation of China under Grant Nos 60736036, 60706009, 60777021 and 60702006, the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902, and the National High-Tech Research and Development Program of China under Grant No 2007AA03Z419,
Indexed BySCI
Language英语
Date Available2010-12-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20657
Collection中科院半导体材料科学重点实验室
Corresponding AuthorWang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangyang06@semi.ac.cn
Recommended Citation
GB/T 7714
Wang Y ,Qiu YP ,Pan JQ ,et al. High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers[J]. CHINESE PHYSICS LETTERS,2010,27(11):Art. No. 114201.
APA Wang Y .,Qiu YP .,Pan JQ .,Zhao LJ .,Zhu HL .,...&Wang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangyang06@semi.ac.cn.(2010).High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers.CHINESE PHYSICS LETTERS,27(11),Art. No. 114201.
MLA Wang Y ,et al."High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers".CHINESE PHYSICS LETTERS 27.11(2010):Art. No. 114201.
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