Knowledge Management System Of Institute of Semiconductors,CAS
| Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires | |
| Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.); Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn | |
| 2010 | |
| Source Publication | CHEMPHYSCHEM
 |
| Volume | 11Issue:15Pages:3329-3332 |
| Abstract | The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes. |
| metadata_24 | 国际 |
| Keyword | Silicon Nanowires Catalytic Growth Band Offsets Solar-cells Semiconductors Superlattices Efficiency |
| Subject Area | 半导体物理 |
| Funding Organization | Z. Wang was financially supported by the National Natural Science Foundation of China (10704014) and the Young Scientists Foundation of Sichuan (09ZQ026-029) and UESTC (JX0731). J. Li was financially supported by the "One-Hundred Talents Plan" of the Chinese Academy of Sciences and National Science Fund for Distinguished Young Scholar. F. Goo and W J. Weber were supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy under Contract DE-AC05-76L01830. |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2010-12-05 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20653 |
| Collection | 半导体超晶格国家重点实验室 |
| Corresponding Author | Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn |
| Recommended Citation GB/T 7714 | Wang ZG ,Li JB ,Gao F ,et al. Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires[J]. CHEMPHYSCHEM,2010,11(15):3329-3332. |
| APA | Wang ZG ,Li JB ,Gao F ,Weber WJ ,&Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn.(2010).Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires.CHEMPHYSCHEM,11(15),3329-3332. |
| MLA | Wang ZG ,et al."Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires".CHEMPHYSCHEM 11.15(2010):3329-3332. |
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