SEMI OpenIR  > 半导体超晶格国家重点实验室
Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires
Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.); Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
2010
Source PublicationCHEMPHYSCHEM
Volume11Issue:15Pages:3329-3332
AbstractThe electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.
metadata_24国际
KeywordSilicon Nanowires Catalytic Growth Band Offsets Solar-cells Semiconductors Superlattices Efficiency
Subject Area半导体物理
Funding OrganizationZ. Wang was financially supported by the National Natural Science Foundation of China (10704014) and the Young Scientists Foundation of Sichuan (09ZQ026-029) and UESTC (JX0731). J. Li was financially supported by the "One-Hundred Talents Plan" of the Chinese Academy of Sciences and National Science Fund for Distinguished Young Scholar. F. Goo and W J. Weber were supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy under Contract DE-AC05-76L01830.
Indexed BySCI
Language英语
Date Available2010-12-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20653
Collection半导体超晶格国家重点实验室
Corresponding AuthorWang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
Recommended Citation
GB/T 7714
Wang ZG ,Li JB ,Gao F ,et al. Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires[J]. CHEMPHYSCHEM,2010,11(15):3329-3332.
APA Wang ZG ,Li JB ,Gao F ,Weber WJ ,&Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn.(2010).Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires.CHEMPHYSCHEM,11(15),3329-3332.
MLA Wang ZG ,et al."Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires".CHEMPHYSCHEM 11.15(2010):3329-3332.
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