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Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors
Zhang YB (Zhang Yanbo); Xiong Y (Xiong Ying); Yang XA (Yang Xiang); Wang Y (Wang Ying); Han WH (Han Weihua); Yang FH (Yang Fuhua); Han, WH, Chinese Acad Sci, Inst Semicond, Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.
2010
Source PublicationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume10Issue:11 Sp. Iss. SIPages:7113-7116
AbstractSOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.
metadata_24其它
KeywordSubthreshold Swing (Ss) Silicon-on-insulator (Soi) Nanowire Wrap Gate Side Gates
Subject Area微电子学
Indexed BySCI
Language英语
Date Available2010-11-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20648
Collection半导体集成技术工程研究中心
Corresponding AuthorHan, WH, Chinese Acad Sci, Inst Semicond, Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Zhang YB ,Xiong Y ,Yang XA ,et al. Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2010,10(11 Sp. Iss. SI):7113-7116.
APA Zhang YB .,Xiong Y .,Yang XA .,Wang Y .,Han WH .,...&Han, WH, Chinese Acad Sci, Inst Semicond, Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China..(2010).Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,10(11 Sp. Iss. SI),7113-7116.
MLA Zhang YB ,et al."Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 10.11 Sp. Iss. SI(2010):7113-7116.
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