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The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.); Song, HP, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songhp@semi.ac.cn; xlliu@semi.ac.cn
2010
Source PublicationSOLID STATE COMMUNICATIONS
Volume150Issue:41-42Pages:1991-1994
AbstractBoth In2O3 and ZnO are potential oxide semiconductor materials for optoelectronics devices. Semi-polar (101) plane wurtzite (w-)ZnO films were grown on bcc-In2O3(111) by metal organic chemical vapor deposition and the epitaxial relation is w-ZnO(101) parallel to bcc-In2O3(111). We have measured the valence band offset (VBO) of w-ZnO(101)/bcc-In2O3(111) heterojunction to settle the question of the band line-up of the ZnO/In2O3 heterojunction. Our result shows that the valence band maximum (VBM) of ZnO(101) lies similar to 0.49 eV below the VBM of bcc-In2O3(111), and the conduction band maximum (CBM) of w-ZnO(101) is about 0.05 eV lower than the CBM of bcc-In2O3 (111), which shows that their CBMs are nearly at the same level.
metadata_24其它
KeywordZno In2o3 Mocvd Photoelectron Spectroscopies In2o3-zno Films Transparent Oxide Semiconductors Inn
Subject Area半导体材料
Funding OrganizationThis work was supported by the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the National Science Foundation of China (Grant Nos. 60506002 and 60776015). The authors express their appreciation to Dr. Tieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.
Indexed BySCI
Language英语
Date Available2010-11-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20646
Collection中科院半导体材料科学重点实验室
Corresponding AuthorSong, HP, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songhp@semi.ac.cn; xlliu@semi.ac.cn
Recommended Citation
GB/T 7714
Song HP ,Zheng GL ,Yang AL ,et al. The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy[J]. SOLID STATE COMMUNICATIONS,2010,150(41-42):1991-1994.
APA Song HP .,Zheng GL .,Yang AL .,Guo Y .,Wei HY .,...&xlliu@semi.ac.cn.(2010).The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy.SOLID STATE COMMUNICATIONS,150(41-42),1991-1994.
MLA Song HP ,et al."The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy".SOLID STATE COMMUNICATIONS 150.41-42(2010):1991-1994.
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