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Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations
Zhang YJ (Zhang Y. J.); Shi HL (Shi H. -L.); Wang SX (Wang S. X.); Zhang P (Zhang P.); Li RW (Li R. W.); Zhang, YJ, Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China. 电子邮箱地址: rongwuli@bnu.edu.cn
2010
Source PublicationEUROPEAN PHYSICAL JOURNAL B
Volume77Issue:3Pages:345-349
AbstractIn this work, the electronic structure and magnetic coupling properties of Gd doped AlN have been investigated using first-principles method. We found that in the AlN:Gd system, due to the s-f coupling allowed by the symmetry, the exchange splitting of the conduction band is much larger than that of the valence band, which makes the electron-mediated ferromagnetism possible in this material. This property is also confirmed by the energy differences between anti-ferromagnetic and ferromagnetic phase for Al14Gd2N16 with different concentrations of electrons (holes), as well as by the calculated exchange constants. The result indicates that Gd-doped AlN is a promising candidate for the applications in future spintronic devices.
metadata_24国内
Subject Area半导体物理
Funding OrganizationThe work is supported by the National Natural Science Foundation of China under Grant No. 60521001, and also by the Foundation of the Chinese Academy of Science.
Indexed BySCI
Language英语
Date Available2010-11-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20644
Collection半导体超晶格国家重点实验室
Corresponding AuthorZhang, YJ, Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China. 电子邮箱地址: rongwuli@bnu.edu.cn
Recommended Citation
GB/T 7714
Zhang YJ ,Shi HL ,Wang SX ,et al. Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations[J]. EUROPEAN PHYSICAL JOURNAL B,2010,77(3):345-349.
APA Zhang YJ ,Shi HL ,Wang SX ,Zhang P ,Li RW ,&Zhang, YJ, Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China. 电子邮箱地址: rongwuli@bnu.edu.cn.(2010).Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations.EUROPEAN PHYSICAL JOURNAL B,77(3),345-349.
MLA Zhang YJ ,et al."Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations".EUROPEAN PHYSICAL JOURNAL B 77.3(2010):345-349.
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