SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MoSi2硅化物的形成及电子结构的研究
李宝骐; 季明荣; 吴建新; 许振嘉; 阎江
1989
Source Publication半导体学报
Volume10Issue:3Pages:179
metadata_83中国科学技术大学;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20641
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李宝骐,季明荣,吴建新,等. MoSi2硅化物的形成及电子结构的研究[J]. 半导体学报,1989,10(3):179.
APA 李宝骐,季明荣,吴建新,许振嘉,&阎江.(1989).MoSi2硅化物的形成及电子结构的研究.半导体学报,10(3),179.
MLA 李宝骐,et al."MoSi2硅化物的形成及电子结构的研究".半导体学报 10.3(1989):179.
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