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热退火对分子束外延生长的高纯GaAs薄膜中深能级的影响
徐鸿达; Andersson T G
1989
Source Publication半导体学报
Volume10Issue:12Pages:912
metadata_83中科院半导体所;Chalmers University of Technology
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:85620
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20631
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐鸿达,Andersson T G. 热退火对分子束外延生长的高纯GaAs薄膜中深能级的影响[J]. 半导体学报,1989,10(12):912.
APA 徐鸿达,&Andersson T G.(1989).热退火对分子束外延生长的高纯GaAs薄膜中深能级的影响.半导体学报,10(12),912.
MLA 徐鸿达,et al."热退火对分子束外延生长的高纯GaAs薄膜中深能级的影响".半导体学报 10.12(1989):912.
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