SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
LEC GaAs中缺陷的光致发光研究
陈廷杰; 吴灵犀; 王占国; 何宏家; 林兰英
1989
Source Publication半导体学报
Volume10Issue:12Pages:917
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:85621
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20629
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈廷杰,吴灵犀,王占国,等. LEC GaAs中缺陷的光致发光研究[J]. 半导体学报,1989,10(12):917.
APA 陈廷杰,吴灵犀,王占国,何宏家,&林兰英.(1989).LEC GaAs中缺陷的光致发光研究.半导体学报,10(12),917.
MLA 陈廷杰,et al."LEC GaAs中缺陷的光致发光研究".半导体学报 10.12(1989):917.
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