SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅中Mo-B络合物的电荷分布
吴汲安; 周洁; 张大仁
1989
Source Publication半导体学报
Volume10Issue:12Pages:952
metadata_83中科院半导体所;中科院生态环境研究中心
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:85626
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20623
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴汲安,周洁,张大仁. 硅中Mo-B络合物的电荷分布[J]. 半导体学报,1989,10(12):952.
APA 吴汲安,周洁,&张大仁.(1989).硅中Mo-B络合物的电荷分布.半导体学报,10(12),952.
MLA 吴汲安,et al."硅中Mo-B络合物的电荷分布".半导体学报 10.12(1989):952.
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