SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅衬底上GaAlAs/GaAs单量子阱激光器
庄婉如; 石志文; 杨培生; 梅野正羲; 神保孝志; 曾我哲夫
1989
Source Publication半导体学报
Volume10Issue:12Pages:960
metadata_83中科院半导体所;日本名古屋工业大学
Subject Area半导体器件
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:85628
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20621
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
庄婉如,石志文,杨培生,等. 硅衬底上GaAlAs/GaAs单量子阱激光器[J]. 半导体学报,1989,10(12):960.
APA 庄婉如,石志文,杨培生,梅野正羲,神保孝志,&曾我哲夫.(1989).硅衬底上GaAlAs/GaAs单量子阱激光器.半导体学报,10(12),960.
MLA 庄婉如,et al."硅衬底上GaAlAs/GaAs单量子阱激光器".半导体学报 10.12(1989):960.
Files in This Item:
File Name/Size DocType Version Access License
6426.pdf(139KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[庄婉如]'s Articles
[石志文]'s Articles
[杨培生]'s Articles
Baidu academic
Similar articles in Baidu academic
[庄婉如]'s Articles
[石志文]'s Articles
[杨培生]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[庄婉如]'s Articles
[石志文]'s Articles
[杨培生]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.