Knowledge Management System Of Institute of Semiconductors,CAS
GaAs/GaAlAs多量子阱激子吸收谱 | |
曾安; 吴荣汉; 曾一平; 孔梅影; 王启明 | |
1989 | |
Source Publication | 半导体学报
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Volume | 10Issue:11Pages:881 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:85637 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20617 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 曾安,吴荣汉,曾一平,等. GaAs/GaAlAs多量子阱激子吸收谱[J]. 半导体学报,1989,10(11):881. |
APA | 曾安,吴荣汉,曾一平,孔梅影,&王启明.(1989).GaAs/GaAlAs多量子阱激子吸收谱.半导体学报,10(11),881. |
MLA | 曾安,et al."GaAs/GaAlAs多量子阱激子吸收谱".半导体学报 10.11(1989):881. |
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6424.pdf(1129KB) | 限制开放 | -- | Application Full Text |
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