SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs多量子阱激子吸收谱
曾安; 吴荣汉; 曾一平; 孔梅影; 王启明
1989
Source Publication半导体学报
Volume10Issue:11Pages:881
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:85637
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20617
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
曾安,吴荣汉,曾一平,等. GaAs/GaAlAs多量子阱激子吸收谱[J]. 半导体学报,1989,10(11):881.
APA 曾安,吴荣汉,曾一平,孔梅影,&王启明.(1989).GaAs/GaAlAs多量子阱激子吸收谱.半导体学报,10(11),881.
MLA 曾安,et al."GaAs/GaAlAs多量子阱激子吸收谱".半导体学报 10.11(1989):881.
Files in This Item:
File Name/Size DocType Version Access License
6424.pdf(1129KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[曾安]'s Articles
[吴荣汉]'s Articles
[曾一平]'s Articles
Baidu academic
Similar articles in Baidu academic
[曾安]'s Articles
[吴荣汉]'s Articles
[曾一平]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[曾安]'s Articles
[吴荣汉]'s Articles
[曾一平]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.