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一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器
朱龙德; Feak G A B; Ballantyne J M; Wagner D K; Tihanyi P L
1989
Source Publication半导体学报
Volume10Issue:10Pages:799
metadata_83中科院半导体所;康乃尔大学;麦道公司光电子中心
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:85650
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20609
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
朱龙德,Feak G A B,Ballantyne J M,等. 一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器[J]. 半导体学报,1989,10(10):799.
APA 朱龙德,Feak G A B,Ballantyne J M,Wagner D K,&Tihanyi P L.(1989).一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器.半导体学报,10(10),799.
MLA 朱龙德,et al."一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器".半导体学报 10.10(1989):799.
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