SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
用离子束混合及快速热处理方法形成钽的硅化物
姚文卿; Ryssed Heiner
1989
Source Publication半导体学报
Volume10Issue:9Pages:667
metadata_83中科院半导体所;University Erlangen-Nurnberg
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:85653
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20607
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
姚文卿,Ryssed Heiner. 用离子束混合及快速热处理方法形成钽的硅化物[J]. 半导体学报,1989,10(9):667.
APA 姚文卿,&Ryssed Heiner.(1989).用离子束混合及快速热处理方法形成钽的硅化物.半导体学报,10(9),667.
MLA 姚文卿,et al."用离子束混合及快速热处理方法形成钽的硅化物".半导体学报 10.9(1989):667.
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