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用离子束混合及快速热处理方法形成钽的硅化物 | |
姚文卿; Ryssed Heiner | |
1989 | |
Source Publication | 半导体学报
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Volume | 10Issue:9Pages:667 |
metadata_83 | 中科院半导体所;University Erlangen-Nurnberg |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:85653 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20607 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 姚文卿,Ryssed Heiner. 用离子束混合及快速热处理方法形成钽的硅化物[J]. 半导体学报,1989,10(9):667. |
APA | 姚文卿,&Ryssed Heiner.(1989).用离子束混合及快速热处理方法形成钽的硅化物.半导体学报,10(9),667. |
MLA | 姚文卿,et al."用离子束混合及快速热处理方法形成钽的硅化物".半导体学报 10.9(1989):667. |
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