SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
用于半导体器件瞬态特性研究的大幅度矩形纳秒脉冲发生器
周旋; 鲍秉乾; 李强; 李锦林
1989
Source Publication半导体学报
Volume10Issue:9Pages:688
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:85656
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20603
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周旋,鲍秉乾,李强,等. 用于半导体器件瞬态特性研究的大幅度矩形纳秒脉冲发生器[J]. 半导体学报,1989,10(9):688.
APA 周旋,鲍秉乾,李强,&李锦林.(1989).用于半导体器件瞬态特性研究的大幅度矩形纳秒脉冲发生器.半导体学报,10(9),688.
MLA 周旋,et al."用于半导体器件瞬态特性研究的大幅度矩形纳秒脉冲发生器".半导体学报 10.9(1989):688.
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