SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
两性杂质锗在LPE GaAs中分凝系数和占位比的计算
杨辉; 梁骏吾
1989
Source Publication半导体学报
Volume10Issue:10Pages:725
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:85664
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20599
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨辉,梁骏吾. 两性杂质锗在LPE GaAs中分凝系数和占位比的计算[J]. 半导体学报,1989,10(10):725.
APA 杨辉,&梁骏吾.(1989).两性杂质锗在LPE GaAs中分凝系数和占位比的计算.半导体学报,10(10),725.
MLA 杨辉,et al."两性杂质锗在LPE GaAs中分凝系数和占位比的计算".半导体学报 10.10(1989):725.
Files in This Item:
File Name/Size DocType Version Access License
6415.pdf(203KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[杨辉]'s Articles
[梁骏吾]'s Articles
Baidu academic
Similar articles in Baidu academic
[杨辉]'s Articles
[梁骏吾]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[杨辉]'s Articles
[梁骏吾]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.