SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
退火气氛中痕量氧在反应形成pt硅化物中的作用
李映雪; 武国英; 张国炳; 王佑祥
1989
Source Publication半导体学报
Volume10Issue:8Pages:615
metadata_83北京大学;中科院半导体所
Subject Area半导体化学
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20595
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李映雪,武国英,张国炳,等. 退火气氛中痕量氧在反应形成pt硅化物中的作用[J]. 半导体学报,1989,10(8):615.
APA 李映雪,武国英,张国炳,&王佑祥.(1989).退火气氛中痕量氧在反应形成pt硅化物中的作用.半导体学报,10(8),615.
MLA 李映雪,et al."退火气氛中痕量氧在反应形成pt硅化物中的作用".半导体学报 10.8(1989):615.
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