SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火
吴春武; 殷士端; 张敬平; 范缇文; 刘家瑞; 朱沛然
1989
Source Publication半导体学报
Volume10Issue:9Pages:659
metadata_83中科院半导体所;中科院物理所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:85676
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20593
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴春武,殷士端,张敬平,等. Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火[J]. 半导体学报,1989,10(9):659.
APA 吴春武,殷士端,张敬平,范缇文,刘家瑞,&朱沛然.(1989).Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火.半导体学报,10(9),659.
MLA 吴春武,et al."Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火".半导体学报 10.9(1989):659.
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