SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
n型LEC-GaAs中E5能级的研究
张芊; 王占国; 万寿科; 林兰英
1989
Source Publication半导体学报
Volume10Issue:6Pages:471
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:85677
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20591
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张芊,王占国,万寿科,等. n型LEC-GaAs中E5能级的研究[J]. 半导体学报,1989,10(6):471.
APA 张芊,王占国,万寿科,&林兰英.(1989).n型LEC-GaAs中E5能级的研究.半导体学报,10(6),471.
MLA 张芊,et al."n型LEC-GaAs中E5能级的研究".半导体学报 10.6(1989):471.
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