SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
a-Si:H带尾态的光致变化
孔光临; 毛自力
1989
Source Publication半导体学报
Volume10Issue:6Pages:479
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:85679
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20589
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孔光临,毛自力. a-Si:H带尾态的光致变化[J]. 半导体学报,1989,10(6):479.
APA 孔光临,&毛自力.(1989).a-Si:H带尾态的光致变化.半导体学报,10(6),479.
MLA 孔光临,et al."a-Si:H带尾态的光致变化".半导体学报 10.6(1989):479.
Files in This Item:
File Name/Size DocType Version Access License
6410.pdf(119KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[孔光临]'s Articles
[毛自力]'s Articles
Baidu academic
Similar articles in Baidu academic
[孔光临]'s Articles
[毛自力]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[孔光临]'s Articles
[毛自力]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.