SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅中Pd-B络合物性质的理论研究
吴汲安; 周洁; 张大仁
1989
Source Publication半导体学报
Volume10Issue:6Pages:434
metadata_83中科院半导体所;中科院生态环境研究中心
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:85694
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20587
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴汲安,周洁,张大仁. 硅中Pd-B络合物性质的理论研究[J]. 半导体学报,1989,10(6):434.
APA 吴汲安,周洁,&张大仁.(1989).硅中Pd-B络合物性质的理论研究.半导体学报,10(6),434.
MLA 吴汲安,et al."硅中Pd-B络合物性质的理论研究".半导体学报 10.6(1989):434.
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