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硅中Pd-B络合物性质的理论研究 | |
吴汲安; 周洁; 张大仁 | |
1989 | |
Source Publication | 半导体学报
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Volume | 10Issue:6Pages:434 |
metadata_83 | 中科院半导体所;中科院生态环境研究中心 |
Subject Area | 半导体材料 |
Funding Organization | 国家自然科学基金 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:85694 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20587 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 吴汲安,周洁,张大仁. 硅中Pd-B络合物性质的理论研究[J]. 半导体学报,1989,10(6):434. |
APA | 吴汲安,周洁,&张大仁.(1989).硅中Pd-B络合物性质的理论研究.半导体学报,10(6),434. |
MLA | 吴汲安,et al."硅中Pd-B络合物性质的理论研究".半导体学报 10.6(1989):434. |
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6409.pdf(198KB) | 限制开放 | -- | Application Full Text |
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