SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅中与钯相关的深能级的研究
傅建明; 王占国; 万寿科; 林兰英
1989
Source Publication半导体学报
Volume10Issue:5Pages:343
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:85703
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20585
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
傅建明,王占国,万寿科,等. 硅中与钯相关的深能级的研究[J]. 半导体学报,1989,10(5):343.
APA 傅建明,王占国,万寿科,&林兰英.(1989).硅中与钯相关的深能级的研究.半导体学报,10(5),343.
MLA 傅建明,et al."硅中与钯相关的深能级的研究".半导体学报 10.5(1989):343.
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