SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
单晶硅中磷离子注入缺陷的HREM研究
严勇; 李齐; 冯端; 孙慧龄; 王培大
1989
Source Publication半导体学报
Volume10Issue:4Pages:276
metadata_83南京大学;中科院微电子中心;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:85717
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20581
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
严勇,李齐,冯端,等. 单晶硅中磷离子注入缺陷的HREM研究[J]. 半导体学报,1989,10(4):276.
APA 严勇,李齐,冯端,孙慧龄,&王培大.(1989).单晶硅中磷离子注入缺陷的HREM研究.半导体学报,10(4),276.
MLA 严勇,et al."单晶硅中磷离子注入缺陷的HREM研究".半导体学报 10.4(1989):276.
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