单晶硅中磷离子注入缺陷的HREM研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	单晶硅中磷离子注入缺陷的HREM研究
	严勇; 李齐; 冯端; 孙慧龄; 王培大
	1989
Source Publication	半导体学报
Volume	10 Issue:4 Pages:276
metadata_83	南京大学;中科院微电子中心;中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:85717
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20581
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	严勇,李齐,冯端,等. 单晶硅中磷离子注入缺陷的HREM研究[J]. 半导体学报,1989,10(4):276.
APA	严勇,李齐,冯端,孙慧龄,&王培大.(1989).单晶硅中磷离子注入缺陷的HREM研究.半导体学报,10(4),276.
MLA	严勇,et al."单晶硅中磷离子注入缺陷的HREM研究".半导体学报 10.4(1989):276.

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