Knowledge Management System Of Institute of Semiconductors,CAS
单晶硅中磷离子注入缺陷的HREM研究 | |
严勇; 李齐; 冯端; 孙慧龄; 王培大 | |
1989 | |
Source Publication | 半导体学报
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Volume | 10Issue:4Pages:276 |
metadata_83 | 南京大学;中科院微电子中心;中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:85717 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20581 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 严勇,李齐,冯端,等. 单晶硅中磷离子注入缺陷的HREM研究[J]. 半导体学报,1989,10(4):276. |
APA | 严勇,李齐,冯端,孙慧龄,&王培大.(1989).单晶硅中磷离子注入缺陷的HREM研究.半导体学报,10(4),276. |
MLA | 严勇,et al."单晶硅中磷离子注入缺陷的HREM研究".半导体学报 10.4(1989):276. |
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6406.pdf(107KB) | 限制开放 | -- | Application Full Text |
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