SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InxGa(1-x)As/GaAs应变单量子阱结构的静压光致发光研究
李国华; 郑宝真; 韩和相; 汪兆平; Andersson T G; Chen Z G
1989
Source Publication半导体学报
Volume10Issue:4Pages:317
metadata_83中科院半导体所;Chalmers University
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20579
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李国华,郑宝真,韩和相,等. InxGa(1-x)As/GaAs应变单量子阱结构的静压光致发光研究[J]. 半导体学报,1989,10(4):317.
APA 李国华,郑宝真,韩和相,汪兆平,Andersson T G,&Chen Z G.(1989).InxGa(1-x)As/GaAs应变单量子阱结构的静压光致发光研究.半导体学报,10(4),317.
MLA 李国华,et al."InxGa(1-x)As/GaAs应变单量子阱结构的静压光致发光研究".半导体学报 10.4(1989):317.
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