SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
亚微米栅长调制掺杂场效应管(MODFET)的制造
杨玉芬; 陈宗圭; 张矩
1989
Source Publication半导体学报
Volume10Issue:3Pages:192
metadata_83中科院半导体所;北京理工大学
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:85728
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20575
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨玉芬,陈宗圭,张矩. 亚微米栅长调制掺杂场效应管(MODFET)的制造[J]. 半导体学报,1989,10(3):192.
APA 杨玉芬,陈宗圭,&张矩.(1989).亚微米栅长调制掺杂场效应管(MODFET)的制造.半导体学报,10(3),192.
MLA 杨玉芬,et al."亚微米栅长调制掺杂场效应管(MODFET)的制造".半导体学报 10.3(1989):192.
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