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亚微米栅长调制掺杂场效应管(MODFET)的制造 | |
杨玉芬; 陈宗圭; 张矩 | |
1989 | |
Source Publication | 半导体学报
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Volume | 10Issue:3Pages:192 |
metadata_83 | 中科院半导体所;北京理工大学 |
Subject Area | 半导体器件 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:85728 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20575 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 杨玉芬,陈宗圭,张矩. 亚微米栅长调制掺杂场效应管(MODFET)的制造[J]. 半导体学报,1989,10(3):192. |
APA | 杨玉芬,陈宗圭,&张矩.(1989).亚微米栅长调制掺杂场效应管(MODFET)的制造.半导体学报,10(3),192. |
MLA | 杨玉芬,et al."亚微米栅长调制掺杂场效应管(MODFET)的制造".半导体学报 10.3(1989):192. |
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