SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MBE高掺Be p-GaAs中Eg+△0等高于带边的发光
胡天斗; 许继宗; 梁基本; 庄蔚华
1989
Source Publication半导体学报
Volume10Issue:3Pages:222
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:85732
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20573
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
胡天斗,许继宗,梁基本,等. MBE高掺Be p-GaAs中Eg+△0等高于带边的发光[J]. 半导体学报,1989,10(3):222.
APA 胡天斗,许继宗,梁基本,&庄蔚华.(1989).MBE高掺Be p-GaAs中Eg+△0等高于带边的发光.半导体学报,10(3),222.
MLA 胡天斗,et al."MBE高掺Be p-GaAs中Eg+△0等高于带边的发光".半导体学报 10.3(1989):222.
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