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GaAs/P型AlxGa(1-x)As异质结界面二维空穴的量子输运特性
周海平; 郑厚植; 杨富华; 曾一平; 苏爱民
1989
Source Publication半导体学报
Volume10Issue:2Pages:100
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20571
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周海平,郑厚植,杨富华,等. GaAs/P型AlxGa(1-x)As异质结界面二维空穴的量子输运特性[J]. 半导体学报,1989,10(2):100.
APA 周海平,郑厚植,杨富华,曾一平,&苏爱民.(1989).GaAs/P型AlxGa(1-x)As异质结界面二维空穴的量子输运特性.半导体学报,10(2),100.
MLA 周海平,et al."GaAs/P型AlxGa(1-x)As异质结界面二维空穴的量子输运特性".半导体学报 10.2(1989):100.
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