SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
一种新的Y1Ba2Cu3O(7-δ)薄膜三端器件
徐鸿达; 王森; 赵柏儒; 袁彩文; 李林
1989
Source Publication半导体学报
Volume10Issue:2Pages:141
metadata_83中科院半导体所;中科院物理所
Subject Area半导体器件
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20567
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐鸿达,王森,赵柏儒,等. 一种新的Y1Ba2Cu3O(7-δ)薄膜三端器件[J]. 半导体学报,1989,10(2):141.
APA 徐鸿达,王森,赵柏儒,袁彩文,&李林.(1989).一种新的Y1Ba2Cu3O(7-δ)薄膜三端器件.半导体学报,10(2),141.
MLA 徐鸿达,et al."一种新的Y1Ba2Cu3O(7-δ)薄膜三端器件".半导体学报 10.2(1989):141.
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