SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
采用离子注入方法调整和控制氢离子敏场效应管(PH-ISFET)阈值电压
汪正孝
1989
Source Publication半导体学报
Volume10Issue:1Pages:62
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:85755
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20563
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
汪正孝. 采用离子注入方法调整和控制氢离子敏场效应管(PH-ISFET)阈值电压[J]. 半导体学报,1989,10(1):62.
APA 汪正孝.(1989).采用离子注入方法调整和控制氢离子敏场效应管(PH-ISFET)阈值电压.半导体学报,10(1),62.
MLA 汪正孝."采用离子注入方法调整和控制氢离子敏场效应管(PH-ISFET)阈值电压".半导体学报 10.1(1989):62.
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