SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
利用静止畴原理制作的高灵敏度新型GaAs Hall器件
郑一阳
1989
Source Publication半导体学报
Volume10Issue:1Pages:67
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:85756
Date Available2010-11-23
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Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20561
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑一阳. 利用静止畴原理制作的高灵敏度新型GaAs Hall器件[J]. 半导体学报,1989,10(1):67.
APA 郑一阳.(1989).利用静止畴原理制作的高灵敏度新型GaAs Hall器件.半导体学报,10(1),67.
MLA 郑一阳."利用静止畴原理制作的高灵敏度新型GaAs Hall器件".半导体学报 10.1(1989):67.
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