SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
太空生长掺Te-GaAs单晶的结构缺陷观测
蒋四南; 范缇文; 李成基; 林兰英
1989
Source Publication半导体学报
Volume10Issue:1Pages:76
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:85758
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20559
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
蒋四南,范缇文,李成基,等. 太空生长掺Te-GaAs单晶的结构缺陷观测[J]. 半导体学报,1989,10(1):76.
APA 蒋四南,范缇文,李成基,&林兰英.(1989).太空生长掺Te-GaAs单晶的结构缺陷观测.半导体学报,10(1),76.
MLA 蒋四南,et al."太空生长掺Te-GaAs单晶的结构缺陷观测".半导体学报 10.1(1989):76.
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