太空生长掺Te-GaAs单晶的结构缺陷观测

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	太空生长掺Te-GaAs单晶的结构缺陷观测
	蒋四南; 范缇文; 李成基; 林兰英
	1989
Source Publication	半导体学报
Volume	10 Issue:1 Pages:76
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:85758
Date Available	2010-11-23
Citation statistics	Cited Times:2[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20559
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	蒋四南,范缇文,李成基,等. 太空生长掺Te-GaAs单晶的结构缺陷观测[J]. 半导体学报,1989,10(1):76.
APA	蒋四南,范缇文,李成基,&林兰英.(1989).太空生长掺Te-GaAs单晶的结构缺陷观测.半导体学报,10(1),76.
MLA	蒋四南,et al."太空生长掺Te-GaAs单晶的结构缺陷观测".半导体学报 10.1(1989):76.

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