掺In半绝缘GaAs衬底上外延GaAs的晶格失配研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	掺In半绝缘GaAs衬底上外延GaAs的晶格失配研究
	杨保华; 王玉田; 李成基; 何宏家; 王占国; 林兰英
	1989
Source Publication	半导体学报
Volume	10 Issue:2 Pages:81
metadata_83	中科院半导体所
Subject Area	半导体物理
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:85759
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20557
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	杨保华,王玉田,李成基,等. 掺In半绝缘GaAs衬底上外延GaAs的晶格失配研究[J]. 半导体学报,1989,10(2):81.
APA	杨保华,王玉田,李成基,何宏家,王占国,&林兰英.(1989).掺In半绝缘GaAs衬底上外延GaAs的晶格失配研究.半导体学报,10(2),81.
MLA	杨保华,et al."掺In半绝缘GaAs衬底上外延GaAs的晶格失配研究".半导体学报 10.2(1989):81.

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