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MBE[(AlxGa(1-x)As)l(GaAs)m]n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究
姜力; 吴苍生; 王玉田; 高维宾
1989
Source Publication半导体学报
Volume10Issue:2Pages:86
metadata_83中科院高能物理所;中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20555
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
姜力,吴苍生,王玉田,等. MBE[(AlxGa(1-x)As)l(GaAs)m]n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究[J]. 半导体学报,1989,10(2):86.
APA 姜力,吴苍生,王玉田,&高维宾.(1989).MBE[(AlxGa(1-x)As)l(GaAs)m]n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究.半导体学报,10(2),86.
MLA 姜力,et al."MBE[(AlxGa(1-x)As)l(GaAs)m]n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究".半导体学报 10.2(1989):86.
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