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硅表面原子芯态能级的化学位移 | |
邢益荣; 钟学富 | |
1989 | |
Source Publication | 半导体学报
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Volume | 10Issue:1Pages:8 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体化学 |
Funding Organization | 国家自然科学基金 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:85762 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20553 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 邢益荣,钟学富. 硅表面原子芯态能级的化学位移[J]. 半导体学报,1989,10(1):8. |
APA | 邢益荣,&钟学富.(1989).硅表面原子芯态能级的化学位移.半导体学报,10(1),8. |
MLA | 邢益荣,et al."硅表面原子芯态能级的化学位移".半导体学报 10.1(1989):8. |
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6392.pdf(129KB) | 限制开放 | -- | Application Full Text |
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