SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅表面原子芯态能级的化学位移
邢益荣; 钟学富
1989
Source Publication半导体学报
Volume10Issue:1Pages:8
metadata_83中科院半导体所
Subject Area半导体化学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:85762
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20553
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邢益荣,钟学富. 硅表面原子芯态能级的化学位移[J]. 半导体学报,1989,10(1):8.
APA 邢益荣,&钟学富.(1989).硅表面原子芯态能级的化学位移.半导体学报,10(1),8.
MLA 邢益荣,et al."硅表面原子芯态能级的化学位移".半导体学报 10.1(1989):8.
Files in This Item:
File Name/Size DocType Version Access License
6392.pdf(129KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[邢益荣]'s Articles
[钟学富]'s Articles
Baidu academic
Similar articles in Baidu academic
[邢益荣]'s Articles
[钟学富]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[邢益荣]'s Articles
[钟学富]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.