硅表面原子芯态能级的化学位移

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	硅表面原子芯态能级的化学位移
	邢益荣; 钟学富
	1989
Source Publication	半导体学报
Volume	10 Issue:1 Pages:8
metadata_83	中科院半导体所
Subject Area	半导体化学
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:85762
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20553
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	邢益荣,钟学富. 硅表面原子芯态能级的化学位移[J]. 半导体学报,1989,10(1):8.
APA	邢益荣,&钟学富.(1989).硅表面原子芯态能级的化学位移.半导体学报,10(1),8.
MLA	邢益荣,et al."硅表面原子芯态能级的化学位移".半导体学报 10.1(1989):8.

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