Knowledge Management System Of Institute of Semiconductors,CAS
In(0.25) Ga(0.75) As/GaAs应变异质结的离子沟道分析 | |
殷士端; 吴春武; 张敬平; 刘家瑞; 朱沛然 | |
1989 | |
Source Publication | 半导体学报
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Volume | 10Issue:1Pages:12 |
metadata_83 | 中科院半导体所;中科院物理所 |
Subject Area | 半导体物理 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:85763 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20551 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 殷士端,吴春武,张敬平,等. In(0.25) Ga(0.75) As/GaAs应变异质结的离子沟道分析[J]. 半导体学报,1989,10(1):12. |
APA | 殷士端,吴春武,张敬平,刘家瑞,&朱沛然.(1989).In(0.25) Ga(0.75) As/GaAs应变异质结的离子沟道分析.半导体学报,10(1),12. |
MLA | 殷士端,et al."In(0.25) Ga(0.75) As/GaAs应变异质结的离子沟道分析".半导体学报 10.1(1989):12. |
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6391.pdf(160KB) | 限制开放 | -- | Application Full Text |
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