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In(0.25) Ga(0.75) As/GaAs应变异质结的离子沟道分析
殷士端; 吴春武; 张敬平; 刘家瑞; 朱沛然
1989
Source Publication半导体学报
Volume10Issue:1Pages:12
metadata_83中科院半导体所;中科院物理所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:85763
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20551
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
殷士端,吴春武,张敬平,等. In(0.25) Ga(0.75) As/GaAs应变异质结的离子沟道分析[J]. 半导体学报,1989,10(1):12.
APA 殷士端,吴春武,张敬平,刘家瑞,&朱沛然.(1989).In(0.25) Ga(0.75) As/GaAs应变异质结的离子沟道分析.半导体学报,10(1),12.
MLA 殷士端,et al."In(0.25) Ga(0.75) As/GaAs应变异质结的离子沟道分析".半导体学报 10.1(1989):12.
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