Knowledge Management System Of Institute of Semiconductors,CAS
| AlxGa（1-x）As/GaAs异质结界面上二维电子气量了霍耳效应的测量 | |
| 童华; 江丕桓; 周均铭; 黄绮 | |
| 1989 | |
| Source Publication | 低温物理学报
 |
| Volume | 11Issue:3Pages:248 |
| metadata_83 | 中科院半导体所;中科院物理所 |
| Subject Area | 半导体物理 |
| Indexed By | CSCD |
| Language | 中文 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20549 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | 童华,江丕桓,周均铭,等. AlxGa（1-x）As/GaAs异质结界面上二维电子气量了霍耳效应的测量[J]. 低温物理学报,1989,11(3):248. |
| APA | 童华,江丕桓,周均铭,&黄绮.(1989).AlxGa（1-x）As/GaAs异质结界面上二维电子气量了霍耳效应的测量.低温物理学报,11(3),248. |
| MLA | 童华,et al."AlxGa（1-x）As/GaAs异质结界面上二维电子气量了霍耳效应的测量".低温物理学报 11.3(1989):248. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 6390.pdf（111KB） | 限制开放 | -- | Application Full Text | |||
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