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AlxGa(1-x)As/GaAs异质结界面上二维电子气量了霍耳效应的测量
童华; 江丕桓; 周均铭; 黄绮
1989
Source Publication低温物理学报
Volume11Issue:3Pages:248
metadata_83中科院半导体所;中科院物理所
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2010-11-23
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Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20549
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
童华,江丕桓,周均铭,等. AlxGa(1-x)As/GaAs异质结界面上二维电子气量了霍耳效应的测量[J]. 低温物理学报,1989,11(3):248.
APA 童华,江丕桓,周均铭,&黄绮.(1989).AlxGa(1-x)As/GaAs异质结界面上二维电子气量了霍耳效应的测量.低温物理学报,11(3),248.
MLA 童华,et al."AlxGa(1-x)As/GaAs异质结界面上二维电子气量了霍耳效应的测量".低温物理学报 11.3(1989):248.
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