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AlxGa(1-x)As/GaAs异质结界面上二维电子气量了霍耳效应的测量 | |
童华; 江丕桓; 周均铭; 黄绮 | |
1989 | |
Source Publication | 低温物理学报
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Volume | 11Issue:3Pages:248 |
metadata_83 | 中科院半导体所;中科院物理所 |
Subject Area | 半导体物理 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20549 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 童华,江丕桓,周均铭,等. AlxGa(1-x)As/GaAs异质结界面上二维电子气量了霍耳效应的测量[J]. 低温物理学报,1989,11(3):248. |
APA | 童华,江丕桓,周均铭,&黄绮.(1989).AlxGa(1-x)As/GaAs异质结界面上二维电子气量了霍耳效应的测量.低温物理学报,11(3),248. |
MLA | 童华,et al."AlxGa(1-x)As/GaAs异质结界面上二维电子气量了霍耳效应的测量".低温物理学报 11.3(1989):248. |
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