SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MBE[(GaAs)l(Ga(1-x)AlxAs)m]n/GaAs(001)一维超晶格的X射线双晶...
王玉田
1989
Source Publication发光学报
Volume10Issue:1Pages:82
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20541
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王玉田. MBE[(GaAs)l(Ga(1-x)AlxAs)m]n/GaAs(001)一维超晶格的X射线双晶...[J]. 发光学报,1989,10(1):82.
APA 王玉田.(1989).MBE[(GaAs)l(Ga(1-x)AlxAs)m]n/GaAs(001)一维超晶格的X射线双晶....发光学报,10(1),82.
MLA 王玉田."MBE[(GaAs)l(Ga(1-x)AlxAs)m]n/GaAs(001)一维超晶格的X射线双晶...".发光学报 10.1(1989):82.
Files in This Item:
File Name/Size DocType Version Access License
6386.pdf(409KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[王玉田]'s Articles
Baidu academic
Similar articles in Baidu academic
[王玉田]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[王玉田]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.