InGaAs/GaAs应变耦合量子阱光学性质的研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	InGaAs/GaAs应变耦合量子阱光学性质的研究
	徐强; 徐仲英; 庄蔚华
	1989
Source Publication	红外与毫米波学报
Volume	8 Issue:2 Pages:103
metadata_83	中科院半导体所
Subject Area	半导体物理
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:93689
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20535
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	徐强,徐仲英,庄蔚华. InGaAs/GaAs应变耦合量子阱光学性质的研究[J]. 红外与毫米波学报,1989,8(2):103.
APA	徐强,徐仲英,&庄蔚华.(1989).InGaAs/GaAs应变耦合量子阱光学性质的研究.红外与毫米波学报,8(2),103.
MLA	徐强,et al."InGaAs/GaAs应变耦合量子阱光学性质的研究".红外与毫米波学报 8.2(1989):103.

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