SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/GaAs应变耦合量子阱光学性质的研究
徐强; 徐仲英; 庄蔚华
1989
Source Publication红外与毫米波学报
Volume8Issue:2Pages:103
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:93689
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20535
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐强,徐仲英,庄蔚华. InGaAs/GaAs应变耦合量子阱光学性质的研究[J]. 红外与毫米波学报,1989,8(2):103.
APA 徐强,徐仲英,&庄蔚华.(1989).InGaAs/GaAs应变耦合量子阱光学性质的研究.红外与毫米波学报,8(2),103.
MLA 徐强,et al."InGaAs/GaAs应变耦合量子阱光学性质的研究".红外与毫米波学报 8.2(1989):103.
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