SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
干法刻蚀Ⅲ-Ⅴ族化合物半导体材料的最新进展
朱洪亮
1989
Source Publication科学通报
Volume34Issue:22Pages:1681
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:96195
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20529
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
朱洪亮. 干法刻蚀Ⅲ-Ⅴ族化合物半导体材料的最新进展[J]. 科学通报,1989,34(22):1681.
APA 朱洪亮.(1989).干法刻蚀Ⅲ-Ⅴ族化合物半导体材料的最新进展.科学通报,34(22),1681.
MLA 朱洪亮."干法刻蚀Ⅲ-Ⅴ族化合物半导体材料的最新进展".科学通报 34.22(1989):1681.
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