SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
一种优良的抗辐射高压NMOS/SOS驱动器件
刘忠立; 和致经; 刘荣环; 于芳
1989
Source Publication微电子学与计算机
Volume6Issue:12Pages:32
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:101102
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20527
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘忠立,和致经,刘荣环,等. 一种优良的抗辐射高压NMOS/SOS驱动器件[J]. 微电子学与计算机,1989,6(12):32.
APA 刘忠立,和致经,刘荣环,&于芳.(1989).一种优良的抗辐射高压NMOS/SOS驱动器件.微电子学与计算机,6(12),32.
MLA 刘忠立,et al."一种优良的抗辐射高压NMOS/SOS驱动器件".微电子学与计算机 6.12(1989):32.
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