SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/GaAs应变异质结中的反常离子沟道效应
吴春武; 殷士端; 张敬平; 肖光明; 刘家瑞; 朱沛然
1989
Source Publication物理学报
Volume38Issue:1Pages:83
metadata_83中科院半导体所;中科院物理所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:102196
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20519
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴春武,殷士端,张敬平,等. InGaAs/GaAs应变异质结中的反常离子沟道效应[J]. 物理学报,1989,38(1):83.
APA 吴春武,殷士端,张敬平,肖光明,刘家瑞,&朱沛然.(1989).InGaAs/GaAs应变异质结中的反常离子沟道效应.物理学报,38(1),83.
MLA 吴春武,et al."InGaAs/GaAs应变异质结中的反常离子沟道效应".物理学报 38.1(1989):83.
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