SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Progress in MOCVD and MBE in China
Peng Ruiwu; Kong Meiying; Jin Yixin
1990
Source PublicationRare Metals
Volume9Issue:3Pages:223
metadata_83中科院上海冶金所;中科院半导体所;中科院长春物理所
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:111967
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20513
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Peng Ruiwu,Kong Meiying,Jin Yixin. Progress in MOCVD and MBE in China[J]. Rare Metals,1990,9(3):223.
APA Peng Ruiwu,Kong Meiying,&Jin Yixin.(1990).Progress in MOCVD and MBE in China.Rare Metals,9(3),223.
MLA Peng Ruiwu,et al."Progress in MOCVD and MBE in China".Rare Metals 9.3(1990):223.
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